The fact that single-crystal Si would make an ideal material for thin-film transistor devices has long been recognized. Despite this awareness, a viable method by which such a material could be directly produced on a glass substrate has never been formulated. In this letter, it is shown experimentally that location-controlled single-crystal Si regions on aSiO2surface can be obtained in a glass-substrate compatible manner, via excimer-laser-based sequential lateral solidification of thin Si films using a beamlet shape that self-selects and extends a single grain over an arbitrarily large area. This is accomplished by controlling the locations, shape, and extent of melting induced by the incident excimer-laser pulses, in such a manner as to induce interface-contour-affected sequential super-lateral growth of crystals, during which the tendency of grain boundaries to align approximately orthogonal to the solidifying interface is systematically exploited. ©1997 American Institute of Physics.