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Optical properties of one‐dimensional electron gas in semiconductor quantum wires

 

作者: J. S. Weiner,   G. Danan,   A. Pinczuk,   J. Valladares,   L. N. Pfeiffer,   K. West,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 4  

页码: 920-922

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.584943

 

出版商: American Vacuum Society

 

关键词: QUANTUM WELL STRUCTURES;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;FERMI LEVEL;PHOTOLUMINESCENCE;ELECTRON DENSITY;DOPED MATERIALS;BAND STRUCTURE;HETEROSTRUCTURES;LIGHT SCATTERING;GaAs;(AlGa)As

 

数据来源: AIP

 

摘要:

In optical experiments with laterally patterned modulation‐doped GaAs/AlGaAs quantum wells, we observe spatially separate confinement of electrons and holes to one‐dimensional quantum wires. We determine the one‐dimensional subband spacing and Fermi energy from inelastic light scattering and photoluminescence spectra. From these measurements we directly determine the one‐dimensional electron density.

 

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