Behavior of the first layer growth in GaAs molecular beam epitaxy
作者:
D. G. Liu,
C. P. Lee,
K. H. Chang,
J. S. Wu,
D. C. Liou,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 14
页码: 1392-1394
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103445
出版商: AIP
数据来源: AIP
摘要:
The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high‐energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two‐dimensional growth can be obtained.
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