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EnhancedJcand improved grain-boundary properties in Ag-dopedYBa2Cu3O7−&dgr;films

 

作者: P. Selvam,   E. W. Seibt,   D. Kumar,   R. Pinto,   P. R. Apte,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 1  

页码: 137-139

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119452

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A large increase(∼8×)in critical current density,Jc,was achieved forin situlaser ablatedYBa2Cu3O7−&dgr;–Agfilms. High-resolution Auger electron spectroscopic investigation indicates that the Ag-doped films are stoichiometric with a relatively low grain-boundary extension (8 nm) in contrast to undopedYBa2Cu3O7−&dgr;films (32 nm). Further analysis suggests that the doped film contains a much lower silver content(<0.15 wt &percent;)than in the target material (5 wt &percent;). These observations are in excellent agreement with the temperature dependence ofJc,the room-temperature resistivity, and the surface resistance results. Thus,Jcenhancement in Ag-doped films can be attributed to their superior properties, viz., improved microstructure characteristics and the reduced resistive grain boundaries. ©1997 American Institute of Physics.

 

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