EnhancedJcand improved grain-boundary properties in Ag-dopedYBa2Cu3O7−&dgr;films
作者:
P. Selvam,
E. W. Seibt,
D. Kumar,
R. Pinto,
P. R. Apte,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 1
页码: 137-139
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119452
出版商: AIP
数据来源: AIP
摘要:
A large increase(∼8×)in critical current density,Jc,was achieved forin situlaser ablatedYBa2Cu3O7−&dgr;–Agfilms. High-resolution Auger electron spectroscopic investigation indicates that the Ag-doped films are stoichiometric with a relatively low grain-boundary extension (8 nm) in contrast to undopedYBa2Cu3O7−&dgr;films (32 nm). Further analysis suggests that the doped film contains a much lower silver content(<0.15 wt &percent;)than in the target material (5 wt &percent;). These observations are in excellent agreement with the temperature dependence ofJc,the room-temperature resistivity, and the surface resistance results. Thus,Jcenhancement in Ag-doped films can be attributed to their superior properties, viz., improved microstructure characteristics and the reduced resistive grain boundaries. ©1997 American Institute of Physics.
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