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Anisotropy effects on the electronic transport in photoexcited GaAs

 

作者: R. P. Joshi,   S. El‐Ghazaly,   R. O. Grondin,  

 

期刊: Journal of Applied Physics  (AIP Available online 1990)
卷期: Volume 67, issue 12  

页码: 7388-7392

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.344526

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We investigate the effects of both carrier and phononk‐space anisotropy on the transport in bulk GaAs photoconductors. Our results show that photogeneration by laser pulses polarized perpendicular to the electric field can delay the initial velocity rise. Furthermore, anisotropic phonon amplification can degrade the turn‐off characteristics. Finally, unliken‐doped semiconductors, we find that the steady‐state velocity‐field values in photoconductors are reduced because of the nonequilibrium phonon modes.

 

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