Anisotropy effects on the electronic transport in photoexcited GaAs
作者:
R. P. Joshi,
S. El‐Ghazaly,
R. O. Grondin,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 12
页码: 7388-7392
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.344526
出版商: AIP
数据来源: AIP
摘要:
We investigate the effects of both carrier and phononk‐space anisotropy on the transport in bulk GaAs photoconductors. Our results show that photogeneration by laser pulses polarized perpendicular to the electric field can delay the initial velocity rise. Furthermore, anisotropic phonon amplification can degrade the turn‐off characteristics. Finally, unliken‐doped semiconductors, we find that the steady‐state velocity‐field values in photoconductors are reduced because of the nonequilibrium phonon modes.
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