Room‐temperature pseudomorphic InxGa1−xAs/GaAs quantum well surface‐emitting lasers at 0.94–1.0 &mgr;m wavelengths
作者:
K. F. Huang,
K. Tai,
J. L. Jewell,
R. J. Fischer,
S. L. McCall,
A. Y. Cho,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 22
页码: 2192-2194
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101162
出版商: AIP
数据来源: AIP
摘要:
We report room‐temperature lasing at 0.94–1.002 &mgr;m in high‐finesse Fabry– Perot resonators with InxGa1−xAs/GaAs multiple quantum well active layers (x=0.18–0.2). The quantum wells and AlAs/GaAs quarter‐wave stack mirrors were epitaxially grown on GaAs substrates. Optically pumping with 0.875 &mgr;m, 10 ps pulses yielded a threshold of 15 pJ incident pulse energy. The equivalent threshold current density is about 26 &mgr;A/&mgr;m2(2.6 kA/cm2), suggesting ultralow thresholds in micrometer‐size devices. At the lasing wavelengths the GaAs substrates are essentially transparent allowing the possibility of integrating micro‐optic lenslets on the substrate backsides for light collection. Nonlinear optical gating of 1.064 &mgr;m light was also achieved in these structures.
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