Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3
作者:
C.‐H. Chen,
V. Talyansky,
C. Kwon,
M. Rajeswari,
R. P. Sharma,
R. Ramesh,
T. Venkatesan,
John Melngailis,
Z. Zhang,
W. K. Chu,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 20
页码: 3089-3091
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117314
出版商: AIP
数据来源: AIP
摘要:
Thin films of colossal magnetoresistance (MR) material, La0.67Ca0.33MnO3, were implanted with different doses (1011–1015ions/cm2) of 200 keV Ar+ions. The implanted samples were examined by ion channeling and x‐ray diffraction techniques. The channeling results clearly showed that the magnitude of the induced lattice disorder did not increase greatly for implantation doses up to 5×1013ions/cm2. In this low dose implantation regime, the magnetoresistance {MR=[R(0)−R(H)]/R(0)} increased by 50%, the peak resistivity went up by two orders of magnitude, and the magnetoresistivity peak temperature decreased by 130 K compared to the original, unimplanted sample. For doses ≥5×1013ions/cm2, the damage was significant and caused the sample to become semiconducting. ©1996 American Institute of Physics.
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