Transmission electron microscopy study of defects in a directionally grown Al-Cu-C-Ge single quasicrystal
作者:
L.F. Chen,
H. Chen,
F.H. Li,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1995)
卷期:
Volume 71,
issue 1
页码: 51-57
ISSN:0950-0839
年代: 1995
DOI:10.1080/09500839508240513
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Large single decagonal quasicrystals of Al-Cu-Co-Ge alloy about 0.8 mm in diameter and 10 mm in length have been obtained by the directional growth technique. The single decagonal quasicrystals show decaprismatic morphology and their perfection was examined by electron diffraction. It was found that the perfection of these single quasicrystals depends on the growth rate during the directional solidification. A high density of mixed dislocations with Burgers vectors b parallel to the tenfold axis and stacking faults with displacement vectors R parallel to the tenfold axis were introduced into the quasicrystals during rapid directional growth. The effects of the temperature gradient and rate of growth on the defect formation during directional growth are discussed.
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