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Electroluminescence in ZnS1−xTex:CeF3thin‐film devices

 

作者: S. H. Sohn,   D. G. Hyun,   K. Deguchi,   Y. Hamakawa,  

 

期刊: Journal of Applied Physics  （AIP Available online 1993）
卷期: Volume 73, issue 8  

页码: 4092-4094

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.352838

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The effects of Te codoping in ZnS:CeF3thin‐film electroluminescent devices are reported. ZnS1−xTex:CeF3thin films are prepared at several Te concentrations and substrate temperatures. The emissive peak position and intensity depend on Te concentrations, substrate temperatures, the annealing, and drive voltages.

 

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