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RelaxedGe0.9Si0.1alloy layers with low threading dislocation densities grown on low-temperature Si buffers

 

作者: C. S. Peng,   Z. Y. Zhao,   H. Chen,   J. H. Li,   Y. K. Li,   L. W. Guo,   D. Y. Dai,   Q. Huang,   J. M. Zhou,   Y. H. Zhang,   T. T. Sheng,   C. H. Tung,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 72, issue 24  

页码: 3160-3162

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121579

 

出版商: AIP

 

数据来源: AIP

 

摘要:

RelaxedGexSi1−xepilayers with high Ge fractions but low threading dislocation densities have been successfully grown on Si (001) substrate by employing a stepped-up strategy and a set of low-temperatureGeySi1−ybuffers. We show that even if the Ge fraction rises up to 90&percent;, the threading dislocation density can be kept lower than5×106 cm−2in the top layers, while the total thickness of the structure is no more than 1.7 &mgr;m. ©1998 American Institute of Physics.

 

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