Micro‐Raman characterization of structural defects in patterned GaAs‐on‐Si
作者:
W. M. Duncan,
R. J. Matyi,
H. Shichijo,
Y.‐C. Kao,
H.‐Y. Liu,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 16
页码: 1631-1633
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.104070
出版商: AIP
数据来源: AIP
摘要:
We have applied micro‐Raman spectroscopy to the analysis of structural quality of GaAs‐on‐Si where the GaAs growth was performed through openings in an amorphous mask. The presence of the symmetry forbidden transverse optic (TO) phonon band and line shape of the longitudinal optic (LO) phonon band have been used to extract information concerning the structural quality of microscopic regions of GaAs from the Raman spectra. The utility of TO to LO phonon intensity ratios as a measure of crystal quality has been corroborated by correlation to x‐ray rocking curve full width. The structural quality of selectively grown GaAs as determined from first‐order Raman ratios is found to degrade in the vicinity of the transition between single crystal and polycrystalline regions. This work also shows that post‐growth annealing significantly improves the quality of structures with minimum feature size as small as 2 &mgr;m.
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