p‐type doping of molecular beam epitaxy grown GaSb by Ge and Sn has been demonstrated. Both impurities are well behaved with demonstrated free acceptor concentrations as high as 2×1019cm−3for Ge and 5×1018cm−3for Sn. In addition reflection high‐energy electron diffraction measurements during growth indicate that Sn segregation which is common in GaAs does not occur in GaSb. The absence of Sn segregation as well as thep‐type nature of Ge and Sn dopants is attributed to the large covalent bond radius of Sb. These dopants are important since they provide an excellent alternative to Be forp‐type doping of Sb based materials.