High‐mobility InSb grown by organometallic vapor phase epitaxy
作者:
D. K. Gaskill,
G. T. Stauf,
N. Bottka,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 17
页码: 1905-1907
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105069
出版商: AIP
数据来源: AIP
摘要:
The highest mobility InSb epilayer grown to date by organometallic vapor phase epitaxy has been achieved by utilizing high‐purity organometallic sources, choosing a reactor geometry to reproducibly control the source concentrations above the substrate, and using a high‐ integrity reactor system. On ap‐type InSb substrate, an unintentionally doped layer had a 77 Kn‐type carrier concentration and mobility of 1.4×1015cm−3and 2.53×105cm2/V s. Growths on GaAs substrates were greatly affected by the lattice mismatch and had 77 K carrier concentrations similar to the InSb case but with mobilities of (5.0–9.0)×104cm2/V s. The crystal quality, morphology, and cyclotron resonance characteristics are reported and found to be comparable to state‐of‐the‐art molecular beam epitaxy layers.
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