Ion‐beam‐induced epitaxial crystallization (IBIEC) of Fe‐implanted Si(001) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of &ggr;‐FeSi2, &agr;‐FeSi2, and &bgr;‐FeSi2with increasing Fe concentration along the implantation profile. The critical concentrations for the &ggr;‐&agr; and &agr;‐&bgr; phase transitions were determined as ≊11 and 21 at. % Fe, respectively. The observed sequential phase formation can be correlated to the degree of lattice mismatch with the Si matrix and the stoichiometry of the silicide phases. ©1995 American Institute of Physics.