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Optimum Si‐Si1−xGexstructures with strong infrared spectra

 

作者: R. J. Turton,   M. Jaros,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 8  

页码: 767-769

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102708

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have identified symmetrically strained Si‐Si1−xGexsuperlattices with optimum strength infrared spectra in the range 50–300 meV. The growth structure parameters required for implementing such systems are provided.

 

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