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Atomic displacements of si in the Si (111) √3×√3-B surface

 

作者: Li Luo,   G.A. Smith,   Shin Hashimoto,   W.M. Gibson,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1989）
卷期: Volume 111-112, issue 1-2  

页码: 125-129

 

ISSN:1042-0150

 

年代: 1989

 

DOI:10.1080/10420158908212988

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The atomic displacements of Si in the Si(111) √3 × √3-B surface have been studied using high energy He+ion channeling at room temperature. The experimental results show large displacements parallel to the reconstructed surface, but smaller displacements perpendicular to the <110> axial direction. These results are compared with Monte-Carlo simulations.

 

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