High temperature excitonic stimulated emission from ZnO epitaxial layers
作者:
D. M. Bagnall,
Y. F. Chen,
Z. Zhu,
T. Yao,
M. Y. Shen,
T. Goto,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 8
页码: 1038-1040
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122077
出版商: AIP
数据来源: AIP
摘要:
The emission spectrum of high quality ZnO epilayers is studied from room temperature up to 550 K. At room temperature and low excitation power a single emission peak is observed which may be identified with the free exciton from its peak energy and dependence on temperature. However, when excitation intensities exceed 400 kW cm−2a sharp peak emerges at lower energy which we attribute to exciton-exciton scattering. At higher excitation intensities (>800 kW cm−2) a second stimulated emission peak emerges at even lower energies: we attribute this peak to be stimulated emission of an electron hole plasma. Similar features are observed for all temperatures up to 550 K. ©1998 American Institute of Physics.
点击下载:
PDF
(57KB)
返 回