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High temperature excitonic stimulated emission from ZnO epitaxial layers

 

作者: D. M. Bagnall,   Y. F. Chen,   Z. Zhu,   T. Yao,   M. Y. Shen,   T. Goto,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 73, issue 8  

页码: 1038-1040

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.122077

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The emission spectrum of high quality ZnO epilayers is studied from room temperature up to 550 K. At room temperature and low excitation power a single emission peak is observed which may be identified with the free exciton from its peak energy and dependence on temperature. However, when excitation intensities exceed 400 kW cm−2a sharp peak emerges at lower energy which we attribute to exciton-exciton scattering. At higher excitation intensities (>800 kW cm−2) a second stimulated emission peak emerges at even lower energies: we attribute this peak to be stimulated emission of an electron hole plasma. Similar features are observed for all temperatures up to 550 K. ©1998 American Institute of Physics.

 

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