Tunneling Conductance of Asymmetrical Barriers
作者:
W. F. Brinkman,
R. C. Dynes,
J. M. Rowell,
期刊:
Journal of Applied Physics
(AIP Available online 1970)
卷期:
Volume 41,
issue 5
页码: 1915-1921
ISSN:0021-8979
年代: 1970
DOI:10.1063/1.1659141
出版商: AIP
数据来源: AIP
摘要:
The voltage‐dependent tunneling conductance of trapezoidal potential barriers has been calculated using two extreme models of (1) the WKB approximation and (2) perfectly sharp boundaries between the metal electrode and the insulator. We show that for both models the conductance‐voltage plot is roughly parabolic at low voltages(≲0.4 V). The minimum conductance is not at zero bias unless the barrier is symmetrical and identical Fermi energies are chosen for the two metal electrodes. The inclusion of image forces does not radically alter the shape of the conductance‐voltage dependence. Using reasonable barrier shapes, the asymmetry of the calculated conductance aboutV=0 is not as large as we frequently observe experimentally. We point out that this extreme asymmetry appears to be associated with the presence of organic impurities in the oxide layer of the junction.
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