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Observation of a new Al(111)/Si(111) orientational epitaxy

 

作者: A. S. Yapsir,   C.‐H. Choi,   T.‐M. Lu,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 2  

页码: 796-799

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345734

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new Al(111)/Si(111) orientational epitaxy using x‐ray pole figure analysis is reported. The new structure has a 19° rotation with respect to the parallel epitaxy. The results are explained using a geometrical lattice matching concept.

 

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