The recrystallization and dopant activation in the BF2+implanted samples with a 110 keV/5×1015cm−2condition into a Si substrate and annealed with different heating rates to various preset temperatures for zero holding time have been studied. A higher heating rate yielded a higher carrier mobility and a better crystallinity. A statistical model was proposed to characterize the dopant activation. The activated dopant concentrationnwas expressed as &ggr; exp(−Ea/kT). The pre‐exponential term &ggr; is a function of critical temperatureTc, due to a finite melting point of Si, and heating rate. Both the effective activation energyEaandTcvalues decreased with increasing heating rate. With increasing heating rate, the &ggr; term rapidly decreased at low rates due to the shortened effective annealing time, but showed slight increase at high rates due to the decreasedTcvalue. Low heating rates facilitated the dopant activation via the &ggr; term, while high heating rates enhanced the activation efficiency via theEaterm.