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High mobility two‐dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction

 

作者: W. I. Wang,   E. E. Mendez,   Y. Iye,   B. Lee,   M. H. Kim,   G. E. Stillman,  

 

期刊: Journal of Applied Physics  （AIP Available online 1986）
卷期: Volume 60, issue 5  

页码: 1834-1835

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337227

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have obtained two‐dimensional hole gas with low temperature mobility as high as 3.8×105cm2 V−1 s−1at a density of 1×1011cm−2. The sample was grown on (311)A orientation. We give arguments to show that (100) orientation is not the optimum orientation for the growth of high purity materials.

 

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