In this paper we present an experimental method for the derivation of the state distribution in the pseudogap of an amorphous material. The method is based on capacitance‐voltage (C‐V) measurements and on transient capacitance interpretation. Analysis of the frequency and temperature dependence of theC‐Vcharacteristics, obtained under deep depletion conditions, enables a differential determination of the density of states in part of the forbidden gap. This approach is shown to have advantages over other capacitance‐based methods in particular for routine comparative studies. In the present work we have measured phosphorus‐dopeda‐Si:H (hydrogenated amorphous silicon) materials which have been prepared under similar conditions in three different laboratories. The results indicate that the discrepancy found in the density‐of‐states maps derived in different laboratories are due more to the different data interpretations than to real variations between the materials. The map derived here is found to be in general agreement with results obtained by other transient capacitance methods. In particular, the presence of a wide peak in the density of states, the center of which is around midgap. The peak increases with increasing dopant concentration but the rise in the Fermi level and the doping efficiency appear to be associated with the fine details of the density‐of‐states dip which lies between the above peak and the sharply rising conduction band tail.