High‐frequency capacitive effects in resonant tunneling diodes
作者:
X. J. Lu,
D. Rhodes,
B. S. Perlman,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 4
页码: 2908-2913
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.355292
出版商: AIP
数据来源: AIP
摘要:
The time‐varying charge buildup in the quantum well region of a resonant tunneling diode (RTD) and related capacitive effects are calculated using the scattering matrix method developed. The small signal analysis of admittance shows a prominent influence from the capacitive effect, due to the dynamic shifting of the resonant energy levels. The model developed is helpful for understanding the RTD’s high‐frequency behavior and device applications.
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