This paper describes the conduction mechanisms in r.f.-sputtered Schottky-barrier solar cells incorporating hydrogenated amorphous Si (a-Si-H). The illumination and temperature dependence of the open-circuit voltage(VOC) and the short-circuit current (Js—c) of the cells are discussed. The properties of the cells containing optimum and nonoptimum a-Si-H and various Schottky metals are contrasted. The temperature dependence of the forward characteristics of the cells is also examined. Three different conduction mechanisms in the Schottky-barrier cells are identified and described.