Ferroelectric lead‐zirconate‐titanate (PZT) thin films have been deposited by excimer laser ablation on sapphire substrates with and without an electrode. In preparation for the films, O2gas pressure has greatly influenced the film structure and morphology. For the first time, we have confirmed the ferroelectric properties of PZT films prepared by laser ablation without post‐annealing. It appears to be possible to use these films for nonvolatile random access memories with some additional improvements in the film properties.