We have measured sheet resistance and mobility changes for a series of In0.53Ga0.47As layers as a result of hydrogen, boron, and beryllium implantation. We find that boron and beryllium implantation can produce a two order‐of‐magnitude increase in sheet resistance due mainly to a decrease in mobility accompanied by a smaller decrease in the sheet carrier concentration. Hydrogen implantation results in a decrease in sheet resistance due to an increase in electron concentration accompanied by only a small mobility decrease. The increase in sheet resistance due to boron and beryllium implants is not large enough to have obvious application for device isolation.