Electrochemical models of failure in oxide perovskites
作者:
SeshuB. Desu,
InK. Yoo,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1993)
卷期:
Volume 3,
issue 4
页码: 365-376
ISSN:1058-4587
年代: 1993
DOI:10.1080/10584589308216692
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Electrochemical models of failure in oxide perovskite materials are reviewed. It is noted that oxygen vacancies are a common source of electrical degradation, fatigue, and ageing. Taking the behavior of oxygen vacancies into account, a semi-quantitative model for time dependent dielectric breakdown (TDDB) is proposed and a quantitative fatigue mechanism is discussed for ferroelectric thin films. Based on the fatigue theory, a recent improvement in fatigue of ferroelectric thin films is presented. Correlation between leakage current and fatigue is also presented.
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