The transverse current–voltage characteristics of Copper‐ phthalocyanine (CuPc)/Si, PbTe/Si, and PbTe/CuPc/Si junction have been observed in the dark and under illumination. The PbTe/CuPc/Si junction exhibits a strong photovoltaic response with quantum efficiency of 15.4% and power conversion efficiency of 3.46×10−2. The photocarrier is generated in CuPc layer and the carrier is well separated by the steep incline of the potential near the CuPc/PbTe interface. The CuPc/PbTe multilayers show large photoconduction effect in the in‐plane direction. ©1996 American Institute of Physics.