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X‐ray study on impurity diffusion in a GaAs‐AlAs superlattice

 

作者: H. Terauchi,   S. Sekimoto,   N. Sano,   H. Kato,   M. Nakayama,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 44, issue 10  

页码: 971-973

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94615

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The mechanism of Zn diffusion in a GaAs‐AlAs superlattice has been studied by measuring the x‐ray satellite intensity. The satellite intensity decreases and its width increases with increasng annealing time. The local structure around Zn atom is discussed.

 

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