Results of growth of InAs on a superconducting TlCaBaCuO (2‐1‐2‐2) thin film are reported. The InAs was grown by molecular beam migration‐enhanced epitaxy at a substrate temperature of 250 °C. TheTc(zero) of the Tl film before and after InAs deposition was 106 and 100 K, respectively. X‐ray diffraction and reflection electron microscopy studies showed the InAs to be polycrystalline, having grains in the 300 A˚ size range. This is the first report of deposition of a III‐V semiconductor on superconductor, without significant degradation ofTc.