Measurement and modeling of the fast collapse of HgCdTe metal‐insulator‐semiconductor devices
作者:
M. Meyassed,
Y. Nemirovsky,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 19
页码: 2439-2441
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105988
出版商: AIP
数据来源: AIP
摘要:
Hg1−xCdxTe metal‐insulator‐semiconductor (MIS) devices withx&bartil;0.22 often exhibit very short storage times that are determined by minority‐carrier dark currents. This study describes a novel system, for measuring the fast collapse of such devices. The measurement and modeling of the dark current during the fast collapse process is presented. A quantitative correlation is noticeable between the experimental results and theoretical calculations which assume that thermal‐trap‐assisted tunneling is the dominant dark process. The results demonstrate the importance of trap‐assisted tunneling in narrow band‐gap HgCdTe, and that this process causes short storage times.
点击下载:
PDF
(378KB)
返 回