Analytic models for plasma‐assisted etching of semiconductor trenches
作者:
Barbara Abraham‐Shrauner,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 4
页码: 2347-2351
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587762
出版商: American Vacuum Society
关键词: SEMICONDUCTOR MATERIALS;WAFERS;ETCHING;PLASMA SOURCES;GLOW DISCHARGES;MATHEMATICAL MODELS;TWO−DIMENSIONAL CALCULATIONS
数据来源: AIP
摘要:
The etching of semiconductor wafers is modeled for etching by radicals (isotropic etching) and etching by both radicals and vertically incident cold ions (anisotropic etching) in a glow‐discharge plasma. Explicit analytical expressions for evolving two‐dimensional etched surfaces are found by the method of characteristics. These parametric relations are expressed in terms of the position along the initial exposed wafer surface. Exact surface equations are given for the radical etching with two different ansatz for the evolution equation. The superposition of radical etching and etching due to vertically incident, bombarding ions is solved by approximate analytical expressions for the etched surface. Two‐dimensional etched surfaces are displayed graphically for various times.
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