The monoatomic hydride layer on silicon was used as a prototype for resistless electron beam lithography. Arbitrary patterns with linewidths below 60 nm have been achieved. The variation of the linewidth with electron energy, electron dose, and substrate thickness was studied to determine the mechanisms that govern surface hydrogen desorption and subsequent pattern formation. Unlike in resist based lithography, no resolution enhancement was observed with decreasing substrate thickness. The experimental data in combination with Monte Carlo simulations of the backscattered and transmitted electrons suggest that surface hydrogen desorption and pattern formation are not strongly related to the backscattered electrons and the secondary electrons (energies <50 eV) associated with the backscattered electrons. ©1998 American Institute of Physics.