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Theoretical studies of the intrinsic quality of GaAs/AlGaAs interfaces grown by MBE: Role of kinetic processes

 

作者: Jasprit Singh,   K. K. Bajaj,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 2  

页码: 520-523

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.583166

 

出版商: American Vacuum Society

 

关键词: III−V SEMICONDUCTORS;FLUCTUATIONS;MONTE CARLO METHOD;MIGRATION;INTERFACES;KINETICS;CRYSTAL GROWTH;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;INTERFACE PHENOMENA;STATISTICAL MODELS;MOLECULAR BEAM EPITAXY

 

数据来源: AIP

 

摘要:

We present a model for the growth of III–V compound semiconductors by molecular beam epitaxy which is based on an atomistic Monte Carlo simulation and a statistical fluctuation theory. This model allows one to understand the microscopic nature of the growth front and the interface as well as to identify the critical kinetic parameters responsible for their quality. We find that under normally employed growth conditions the cation surface migration rate is the most important parameter in controlling the surface and interface quality.

 

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