Ion bombardment enhanced mixing op silver layers on silicon
作者:
R Newcombe,
CE Christodoulides,
G Carter,
P Tognetti,
期刊:
Radiation Effects
(Taylor Available online 1980)
卷期:
Volume 50,
issue 2
页码: 51-56
ISSN:0033-7579
年代: 1980
DOI:10.1080/01422448008225599
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Abstract - Silver films evaporated onto silicon substrates were sputtered by 35 keV Ar+ions at different fluences and the evolution of the Ag depth profile was monitored by means of high resolution Rutherford backscattering. Evidence for bombardment-induced intermixing was found. Radiation-enhanced diffusion does not appear to be a major mechanism but at this stage we cannot determine the precise nature of the dominating mechanism.
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