Surface states and space charge layer dynamics on Si(111)2×1: A free electron laser-synchrotron radiation study
作者:
M. Marsi,
M. E. Couprie,
L. Nahon,
D. Garzella,
T. Hara,
R. Bakker,
M. Billardon,
A. Delboulbe´,
G. Indlekofer,
A. Taleb-Ibrahimi,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 7
页码: 895-897
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118307
出版商: AIP
数据来源: AIP
摘要:
Combining the use of a UV storage ring free electron laser and of synchrotron radiation, a time resolved core level spectroscopy study has been performed on photoexcited Si(111)2×1 surfaces with subnanosecond resolution. This enabled us to measure band bending fluctuations, caused by surface carrier dynamics, during the first nanosecond after photoexcitation; differences in theSi2pcore level lineshape, dependent on the pump-probe time delay, were also observed. The presence of defects was found to reduce the fluctuations and make the carrier recombination process faster. ©1997 American Institute of Physics.
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