Thermal stability of implanted dopants in GaN
作者:
R. G. Wilson,
S. J. Pearton,
C. R. Abernathy,
J. M. Zavada,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 17
页码: 2238-2240
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113178
出版商: AIP
数据来源: AIP
摘要:
Results are reported of measurements of depth profiles and stability against redistribution with annealing up to 800 or 900 °C, for implanted Be, C, Mg, Si, S, Zn, Ge, and Se as dopants in GaN. The results confirm the high‐temperature stability of dopants in this material up to temperatures that vary from 600 to 900 °C. S redistributes for temperatures above 600 °C, and Zn and Se, for temperatures above 800 °C. All of the other elements are stable to 900 °C. These results indicate that direct implantation of dopants rather than masked diffusion will probably be necessary to define selective area doping of III–V nitride device structures based on these results for GaN. ©1995 American Institute of Physics.
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