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Polycrystalline silicon by glow discharge technique

 

作者: F. Morin,   M. Morel,  

 

期刊: Applied Physics Letters  （AIP Available online 1979）
卷期: Volume 35, issue 9  

页码: 686-687

 

ISSN:0003-6951

 

年代: 1979

 

DOI:10.1063/1.91254

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Polycrystalline silicon was obtained by glow discharge decomposition of silane on heated amorphous substrates. The influence of substrate temperature on crystalline structure and electrical conductivity of silicon films was investigated. Textured polycrystalline films were obtained above 450 °C.

 

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