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Raman scattering from molecular beam epitaxially grown superlattices of diluted magnetic semiconductors

 

作者: S. Venugopalan,   L. A. Kolodziejski,   R. L. Gunshor,   A. K. Ramdas,  

 

期刊: Applied Physics Letters  (AIP Available online 1984)
卷期: Volume 45, issue 9  

页码: 974-976

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.95469

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report the first Raman scattering study of Cd1−xMnxTe superlattices. The films are grown by molecular beam epitaxy. Brillouin zone‐folding effects on LA phonons, resonant scattering by LO phonons, and the magnetic field‐induced shift of the photoluminescence peak are reported. The latter yields an effective electronicgfactor of ∼100, comparable to that of Cd1−xMnxTe bulk crystals. No collective magnetic excitation was detected at zero field even at 5 K in the superlattices studied. However, the Raman paramagnetic resonance of Mn2+ions could be excited in an applied field. The implications of this result for magnetic phase transitions within superlattice layers are briefly mentioned.

 

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