Raman scattering from molecular beam epitaxially grown superlattices of diluted magnetic semiconductors
作者:
S. Venugopalan,
L. A. Kolodziejski,
R. L. Gunshor,
A. K. Ramdas,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 9
页码: 974-976
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95469
出版商: AIP
数据来源: AIP
摘要:
We report the first Raman scattering study of Cd1−xMnxTe superlattices. The films are grown by molecular beam epitaxy. Brillouin zone‐folding effects on LA phonons, resonant scattering by LO phonons, and the magnetic field‐induced shift of the photoluminescence peak are reported. The latter yields an effective electronicgfactor of ∼100, comparable to that of Cd1−xMnxTe bulk crystals. No collective magnetic excitation was detected at zero field even at 5 K in the superlattices studied. However, the Raman paramagnetic resonance of Mn2+ions could be excited in an applied field. The implications of this result for magnetic phase transitions within superlattice layers are briefly mentioned.
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