Improvements in the figure of merit for tunable microwave dielectrics using combinatorial approach
作者:
Hauyee Chang,
Xiao-Dong Xiang,
期刊:
Integrated Ferroelectrics
(Taylor Available online 2000)
卷期:
Volume 28,
issue 1-4
页码: 113-125
ISSN:1058-4587
年代: 2000
DOI:10.1080/10584580008222225
出版商: Taylor & Francis Group
关键词: combinatorial approach;ferroelectrics;tungsten doping;tunability and figure of merit
数据来源: Taylor
摘要:
Ferroelectric/dielectric materials are useful for a variety of different applications. Addition of small amounts of different dopants often dramatically improves the materials performance. The conventional approach to exploring new materials is to make and characterize samples of discrete composition one at a time. In an effort to accelerate this process, we fabricate a combinatorial materials chips containing 256 differently doped (Ba, Sr)TiO3thin films. From this study, we found that tungsten doping in this class of materials greatly reduces the dielectric loss and does not significantly affect the tunability of these materials. As the result, the overall figures of merit of the materials are greatly improved.
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