The diffusion characteristics and incorporation characteristics of Zn dopants in OMVPE‐grown InP are studied. The Zn diffusion constant depends strongly on concentration and increases by four orders of magnitude in the Zn concentration range 2×1018–8×1018cm−3. This drastic concentration dependence of the Zn diffusion constant is shown to determine the Zn incorporation characteristics during OMVPE growth. A spread of Zn dopants into intentionally undoped regions may result at high Zn doping concentrations in InP. ©1995 American Institute of Physics.