Single crystals of GaAs [(110), (111), and (1¯1¯1¯) faces] were sputtered by normally incident low‐energy (0–140 eV) argon ions in the source of a mass spectrometer. For each face, approximately 99.4% of the collected ions were neutral Ga and As atomic species; the balance were neutral GaAs molecules. No neutral Ga2, As2or (GaAs)2molecules, or negative Ga−, As−, or (GaAs)−ions, with the characteristics of sputtered particles, were detected. Sputtering ``yields'' for the three faces were found to be: ``Y'' (111) ≈ ``Y'' (1¯1¯1¯) > ``Y'' (110).