A point‐defect‐based model for the stress effects on dopant diffusion in silicon is presented. Variations in binding energies and diffusivities of dopant‐defect pairs under hydrostatic pressure are modeled, and a pressure‐dependent dopant diffusion equation is derived. New experimental work was performed on boron pileup near dislocation loops, and compared to the model. Qualitative agreement is possible, which suggests that stress might be a significant effect in scaled modern device structures. ©1995 American Institute of Physics.