Two methods for maskless patterning of SiC using a focusedGa+beam are demonstrated: the enhancement of the chemical etching rate by amorphization of c-SiC to a-SiC and physical sputtering if deep structures are required. Both methods are followed by wet chemical etching inHF:HNO3=1:1 at 80 °C to remove the remaining a-SiC. Assuming the critical displacement density for amorphization to be about the same as for the onset of etching, the measured depths of the structures were compared with the depths of amorphization estimated withTRIM 87calculations. To find optimum sputtering parameters the energy dependence of the sputter yield was investigated and compared withTRIM 87simulations, too. Damage after implantation and after wet chemical etching was investigated by means of Raman spectroscopy. No damaged material remaining after wet chemical etching could be detected.