The electrodeposition technique previously developed by the present authors forinsitugrowth ofp‐type CdTe thin films, has been further improved using As as an acceptor dopant. Photovoltaic‐quality films were grown on conducting glass and Mo substrates and characterized by scanning electron microscopy, electron probe microanalyses, and Auger electron spectroscopy. These films were subsequently utilized in the construction of inverted photovoltaic cell structures comprising then‐CdS/p‐CdTe heterojunction. Efficiencies approaching the 5% level (AM1 insolation) have been obtained thus far on small‐area (∼0.20 cm2) devices.