Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices
作者:
H. J. Osten,
B. Heinemann,
D. Knoll,
G. Lippert,
H. Rücker,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 3
页码: 1750-1753
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590048
出版商: American Vacuum Society
关键词: (Si,Ge)
数据来源: AIP
摘要:
We show that the incorporation of low carbon concentration(<1020cm−3)within the SiGe region of SiGe heterobipolar transistors (HBT) can significantly suppress boron outdiffusion caused by later processing steps. We were able to obtainfT/fmax⩾50 GHz for a simple SiGe:C transistor with a box-shaped Ge profile. Comparing the high frequency performance of molecular beam epitaxy grown SiGe:C HBTs with identical SiGe HBTs, we found an increase infTandfmaxby a factor of more than 2. The static characteristics for SiGe:C HBTs demonstrate that the transistors should be suitable for circuit applications. Process margins for SiGe HBT technology are shown to be relaxed due to C incorporation. The dramatic reduction of B diffusion in C-rich Si under conditions of point defect equilibrium is attributed to a reduction of the concentration of interstitials available for the B diffusion.
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