The first example of a recombination enhanced defect reaction in InP is reported. The major defectE(0.79 eV) introduced by 1‐MeV electron irradiation ofp+njunctions, formed by Zn‐doped epilayers on undopedn‐type substrates, is not observed with Schottky barrier structures on similar material. The defect exhibits a reduction in activation energy of recovery from 1.3 eV under pure thermal annealing to 0.42 eV with minority‐carrier (hole) injection. The enhanced reaction rate is proportional to the square of the injected current showing that the process results from two particle capture.