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LASER ACTION IN FIELD‐IONIZED BULK GaAs

 

作者: P. D. Southgate,  

 

期刊: Applied Physics Letters  （AIP Available online 1968）
卷期: Volume 12, issue 3  

页码: 61-63

 

ISSN:0003-6951

 

年代: 1968

 

DOI:10.1063/1.1651899

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Stimulated emission of recombination radiation has been observed at 78°K inn‐type GaAs ionized by the passage of Gunn domains. Output pulses are about 2 nsec long, and have a bandwidth of 30 Å; more than half the light is emitted within 8° of the normal to the polished specimen face.

 

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