Al0.2Ga0.8Asp+‐njunction solar cells grown by molecular beam epitaxy
作者:
Chikara Amano,
Atsushi Shibukawa,
Masafumi Yamaguchi,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 7
页码: 2780-2782
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335871
出版商: AIP
数据来源: AIP
摘要:
Al0.2Ga0.8Asp+‐njunction solar cells were fabricated by molecular beam epitaxy (MBE) and the relationship between cell properties and growth conditions was examined. It was found that growth temperature strongly influenced the minority carrier diffusion length in cell layers. At a growth temperature of 700 °C, minority carrier diffusion length was much improved and a high conversion efficiency of 12.9% (1 sun AM1.5, for an active area) was obtained.
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