A dose dependence in the effectiveness of a two‐step annealing procedure for As‐implanted ⟨111⟩ silicon has been observed. The upper limiting dose for which two‐step annealing is more effective than a single‐step 900 °C anneal is ∼2×1015As/cm2. Increasing the annealing temperature above 900 °C reduces the dose for which two‐step annealing is more effective than single‐step annealing.